Tianyue Advanced: Create an internationally renowned semiconductor material company

On September 1, Shandong Tianyue Advanced Technology Co., Ltd. stated at the 2022 semi -annual performance briefing that the company has recently signed a long -term agreement with the expected amount of 1.393 billion yuan. The 4th is Sunday, but Tianyue's advanced production workshop is a busy scene. In recent years, the company's capacity utilization rate has been saturated.

This 12 -year -old Shandong enterprise has exceeded key core technologies such as silicon carbide raw materials purification, crystal growth, and substrate processing, and has grown into a leading enterprise in the field of silicon carbide semiconductor materials in my country. According to YOLE statistics according to YOLE, Tianyue's advanced market share in the world's market share in the field of global semi -insulation silicon -based silicon bases has attracted well -known industrial investors and strategic investors.

From 2 -inch to 8 -inch silicon carbide

In the advanced exhibition hall of Tianyue, a silicon carbide power module, silicon carbide chip, silicon carbide power device, silicon carbide substrate, semi -insured silicon carbide substrate, and 2 -inch, 3 -inch, 4 -inch and 6 There are four different specifications of silicon carbide products such as inch.

"One generation of materials, one -generation products, one generation industry, one generation of change. The material revolution is a basic and fundamental change." In the Pioneering Hall of Tianyue, Dou Wentao, secretary of the company's party committee, told Xinhuanghe reporter that after 12 years of technical research, Tianyue The advanced R & D team overcome a series of problems such as the purification of raw materials, the growth of silicon carbide materials, defect control, and substrate processing. It has mastered the core of equipment design, hot field design, powder synthesis, crystal growth, substrate processing and other links. Technology, independently developed different sizes and semi -insulating type and conductive electrical carbon -based silicon substrate preparation technology.

In the growth furnace of silicon carbide crystals, the temperature is as high as 2300 degrees, and carbon powder and silicon powder are directly promoted into gas, which grows around the seed crystal.

The diameter of the substrate is one of the important indicators to measure the level of crystal preparation, and it is also an important way to reduce the cost of downstream chip preparation. The silicon carbide base industry will inevitably develop in a larger size in the future. "Each process window has undergone a large number of experiments. After thousands of furnace experiments, the process of crystal growth has gradually produced 2 -inch, 3 -inch, 4 -inch, 6 -inch silicon -based substrate." According to reports, Tianyue Advanced to achieve the independent control of national core industry strategic supplies to ensure the steady development of my country's wide -band semiconductor industry chain.

"We also broke the continuous diameter expansion technology of the crystal diameter from 150 mm to 200 mm, and successfully prepared 8 -inch silicon carbide. It is currently undergoing solidification process and quality improvement to prepare for 8 -inch mass production." Yue Jianjian will continue to increase the industrialization of the 8 -inch conductivity substrate.

At present, Tianyue Advanced is increasing the production capacity of conductive substrate, and has achieved a wide range of customer verification work with conductive substrates and actively promoting product conductive substrates. Among them, 6 -inch conductive products have obtained. The verification and approval of well -known customers at home and abroad, the verification of customer products is progressing well.

In addition, the difficulty is cut. The hardness of silicon carbide is 9.2, second only to diamond. How to pierce the hardest shield with the most sharp spear, and to ensure high cost performance? The width, tension, line speed, loss, etc. of diamonds need to be continuously tested to obtain optimal solutions.

Create digital chemical plants to improve research and development speed

"Silicon carbide semiconductor is a newly developed semiconductor. High -pressure and high temperature resistance can achieve high frequency and low energy loss and greatly reduce the size of the device. Because of its excellent performance, it is widely applied in the field of RF and the power electronics field, which has been widely recognized. "According to reports, the application prospects of silicon carbide substrate materials are widely used, and the development of downstream application is better. In terms of division, in the field of radio frequency, the construction of silicon carbide 5G base stations and radars have been widely used; in the electronics field, it is used in electric vehicles, charging piles, rail transit, and power grids.

In the field of wide -band semiconductors, the overall technology gap between my country and international giants is small, and the wide -forbidden band silicon carbide semiconductor is also expected to become a major opportunity to change the road. On the track with international giants, how can Tianyue lead the lead? Only a step is fast.

"The growth temperature of silicon carbide semiconductor material has high growth temperature, many influencing factors, and relatively long technical iterative cycle." Dou Wentao introduced that they will use AI technology and digital twin technology to create digital chemical plants, linking through digital factories and physical factories, significantly compressed technology Idne time, increase the speed of research and development.

It is understood that Tianyue's advanced strategy has always been focusing on silicon carbide base. Discovery that the company will adhere to the strategy and strive to further make the substrates. The size is larger, the defects are less, and the demand for the rapidly growing downstream application end will continue to meet.

In the future, Tianyue Advanced will continue to increase research and development input, strengthen independent innovation, accelerate product iteration, increase product quality, increase production capacity, expand market share, and build a well -known international semiconductor material company.

New Yellow River Reporter: Du Lin

Edit: Han Luying

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